/* ********************************************************************************************************* * * 模块名称 : NAND Flash 驱动模块 * 文件名称 : bsp_nand.h * 版 本 : V1.0 * 说 明 : 头文件 * * Copyright (C), 2013-2014, 安富莱电子 www.armfly.com * ********************************************************************************************************* */ #ifndef __NAND_H #define __NAND_H #include "interface.h" typedef struct { uint8_t Maker_ID; uint8_t Device_ID; uint8_t Third_ID; uint8_t Fourth_ID; } NAND_IDTypeDef; typedef struct { uint16_t Zone; uint16_t Block; uint16_t Page; } NAND_ADDRESS_T; /* NAND Flash 型号 */ typedef enum { HY27UF081G2A = 0, K9F1G08U0A, K9F1G08U0B, NAND_UNKNOW } NAND_TYPE_E; #define NAND_TYPE HY27UF081G2A /* 定义有效的 NAND ID HY27UF081G2A = 0xAD 0xF1 0x80 0x1D K9F1G08U0A = 0xEC 0xF1 0x80 0x15 K9F1G08U0B = 0xEC 0xF1 0x00 0x95 */ #define NAND_MAKER_ID 0xAD #define NAND_DEVICE_ID 0xF1 #define NAND_THIRD_ID 0x80 #define NAND_FOURTH_ID 0x1D #define HY27UF081G2A 0xADF1801D #define K9F1G08U0A 0xECF18015 #define K9F1G08U0B 0xECF10095 /* Exported constants --------------------------------------------------------*/ /* NAND Area definition for STM3210E-EVAL Board RevD */ #define CMD_AREA (uint32_t)(1 << 16) /* A16 = CLE high */ #define ADDR_AREA (uint32_t)(1 << 17) /* A17 = ALE high */ #define DATA_AREA ((uint32_t)0x00000000) /* FSMC NAND memory command */ #define NAND_CMD_AREA_A ((uint8_t)0x00) #define NAND_CMD_AREA_B ((uint8_t)0x01) #define NAND_CMD_AREA_C ((uint8_t)0x50) #define NAND_CMD_AREA_TRUE1 ((uint8_t)0x30) #define NAND_CMD_WRITE0 ((uint8_t)0x80) #define NAND_CMD_WRITE_TRUE1 ((uint8_t)0x10) #define NAND_CMD_ERASE0 ((uint8_t)0x60) #define NAND_CMD_ERASE1 ((uint8_t)0xD0) #define NAND_CMD_READID ((uint8_t)0x90) #define NAND_CMD_LOCK_STATUS ((uint8_t)0x7A) #define NAND_CMD_RESET ((uint8_t)0xFF) /* NAND memory status */ #define NAND_BUSY ((uint8_t)0x00) #define NAND_ERROR ((uint8_t)0x01) #define NAND_READY ((uint8_t)0x40) #define NAND_TIMEOUT_ERROR ((uint8_t)0x80) /* FSMC NAND memory parameters */ /* 用于HY27UF081G2A K9F1G08 */ #if NAND_TYPE == HY27UF081G2A #define NAND_PAGE_SIZE ((uint16_t)0x0800) /* 2 * 1024 bytes per page w/o Spare Area */ #define NAND_BLOCK_SIZE ((uint16_t)0x0040) /* 64 pages per block */ #define NAND_ZONE_SIZE ((uint16_t)0x0400) /* 1024 Block per zone */ #define NAND_SPARE_AREA_SIZE ((uint16_t)0x0040) /* last 64 bytes as spare area */ #define NAND_MAX_ZONE ((uint16_t)0x0001) /* 1 zones of 1024 block */ /* 命令代码定义 */ #define NAND_CMD_COPYBACK_A ((uint8_t)0x00) /* PAGE COPY-BACK 命令序列 */ #define NAND_CMD_COPYBACK_B ((uint8_t)0x35) #define NAND_CMD_COPYBACK_C ((uint8_t)0x85) #define NAND_CMD_COPYBACK_D ((uint8_t)0x10) #define NAND_CMD_STATUS ((uint8_t)0x70) /* 读NAND Flash的状态字 */ #define MAX_PHY_BLOCKS_PER_ZONE 1024 /* 每个区最大物理块号 */ #define MAX_LOG_BLOCKS_PER_ZONE 1000 /* 每个区最大逻辑块号 */ #define NAND_BLOCK_COUNT 1024 /* 块个数 */ #define NAND_PAGE_TOTAL_SIZE (NAND_PAGE_SIZE + NAND_SPARE_AREA_SIZE) /* 页面总大小 */ #else #define NAND_PAGE_SIZE ((uint16_t)0x0200) /* 512 bytes per page w/o Spare Area */ #define NAND_BLOCK_SIZE ((uint16_t)0x0020) /* 32x512 bytes pages per block */ #define NAND_ZONE_SIZE ((uint16_t)0x0400) /* 1024 Block per zone */ #define NAND_SPARE_AREA_SIZE ((uint16_t)0x0010) /* last 16 bytes as spare area */ #define NAND_MAX_ZONE ((uint16_t)0x0004) /* 4 zones of 1024 block */ #endif #define NAND_BAD_BLOCK_FLAG 0x00 /* 块内第1个page备用区的第1个字节写入非0xFF数据表示坏块 */ #define NAND_USED_BLOCK_FLAG 0xF0 /* 块内第1个page备用区的第2个字节写入非0xFF数据表示已使用的块 */ #define BI_OFFSET 0 /* 块内第1个page备用区的第1个字节是坏块标志 */ #define USED_OFFSET 1 /* 块内第1个page备用区的第1个字节是已用标志 */ #define LBN0_OFFSET 2 /* 块内第1个page备用区的第3个字节表示逻辑块号低8bit */ #define LBN1_OFFSET 3 /* 块内第1个page备用区的第4个字节表示逻辑块号高8bit */ #define VALID_SPARE_SIZE 4 /* 实际使用的备用区大小,用于函数内部声明数据缓冲区大小 */ /* FSMC NAND memory address computation */ #define ADDR_1st_CYCLE(ADDR) (uint8_t)((ADDR)&0xFF) /* 1st addressing cycle */ #define ADDR_2nd_CYCLE(ADDR) (uint8_t)(((ADDR)&0xFF00) >> 8) /* 2nd addressing cycle */ #define ADDR_3rd_CYCLE(ADDR) (uint8_t)(((ADDR)&0xFF0000) >> 16) /* 3rd addressing cycle */ #define ADDR_4th_CYCLE(ADDR) (uint8_t)(((ADDR)&0xFF000000) >> 24) /* 4th addressing cycle */ /* Exported macro ------------------------------------------------------------*/ /* Exported functions ------------------------------------------------------- */ #define NAND_OK 0 #define NAND_FAIL 1 #define FREE_BLOCK (1 << 12) #define BAD_BLOCK (1 << 13) #define VALID_BLOCK (1 << 14) #define USED_BLOCK (1 << 15) /* LUT[]的格式： uint16_t usGoodBlockFirst; // 第1个好块 uint16_t usDataBlockCount; // 可用于数据存储的块个数, 从第2个好块开始 uint16_t usBakBlockStart; // 备份块起始块号 uint32_t usPhyBlockNo[ulDataBlockCount]; // 物理块号数组。低字节在前，高字节在后。 */ #define DATA_BLOCK_PERCENT 98 /* 数据块占总有效块数的百分比 */ #define LUT_FIRST_GOOD_BLOCK 0 /* LUT[] 第1个单元用于存储第1个有效块号 */ #define LUT_DATA_BLOCK_COUNT 1 /* LUT[] 第2个单元用于存储第有效块号个数 */ #define LUT_BAK_BLOCK_START 2 /* LUT[] 第3个单元用于备份区起始块号 */ #define LUT_GOOD_BLOCK_START 3 /* LUT[] 第4个单元用于数据区起始块号 */ /* Private Structures---------------------------------------------------------*/ typedef struct __SPARE_AREA { uint16_t LogicalIndex; uint16_t DataStatus; uint16_t BlockStatus; } SPARE_AREA; typedef enum { WRITE_IDLE = 0, POST_WRITE, PRE_WRITE, WRITE_CLEANUP, WRITE_ONGOING } WRITE_STATE; typedef enum { OLD_BLOCK = 0, UNUSED_BLOCK } BLOCK_STATE; /* Private macro --------------------------------------------------------------*/ //#define WEAR_LEVELLING_SUPPORT 磨损平衡支持 #define WEAR_DEPTH 10 /* 磨损深度 */ #define PAGE_TO_WRITE (Transfer_Length / 512) #define BAD_BALOK_TEST_CYCLE 5 /* 判别坏块算法的重复擦写次数 */ /* Private variables ----------------------------------------------------------*/ /* Private function prototypes ------------------------------------------------*/ /* exported functions ---------------------------------------------------------*/ uint8_t nand_flash_init(void); uint8_t NAND_Write(uint32_t _ulMemAddr, uint32_t *_pWriteBuf, uint16_t _usSize); uint8_t NAND_Read(uint32_t _ulMemAddr, uint32_t *_pReadBuf, uint16_t _usSize); uint8_t NAND_Format(void); void NAND_DispBadBlockInfo(void); uint8_t NAND_ScanBlock(uint32_t _ulPageNo); uint32_t NAND_FormatCapacity(void); uint32_t NAND_ReadID(void); void NAND_DispPhyPageData(uint32_t _uiPhyPageNo); void NAND_DispLogicPageData(uint32_t _uiLogicPageNo); uint8_t NAND_WriteMultiSectors(uint8_t *_pBuf, uint32_t _SectorNo, uint16_t _SectorSize, uint32_t _SectorCount); uint8_t NAND_ReadMultiSectors(uint8_t *_pBuf, uint32_t _SectorNo, uint16_t _SectorSize, uint32_t _SectorCount); #endif /* __FSMC_NAND_H */ /***************************** 安富莱电子 www.armfly.com (END OF FILE) *********************************/